Epitaxial Growth of CeO2 Buffer Layers on Both YSZ Single Crystal and Textured Ni5W Substrates by MOD Method

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CeO2 has been considered as one of the most lattice compatible and chemically stable materials for YBa2Cu3O7-x coated conductors. In this paper, we presented the epitaxial growth of CeO2 thin film on both YSZ single crystal and cube textured Ni5W substrates by MOD method. Homogenous, crack-free and dense CeO2 thin films on both substrates with sharp biaxially cube texture were fabricated by post-annealing the precursor films at 1000-1150°C. For the CeO2 film on the textured Ni5W substrate, the FWHM values of (111) Phi-scan and (002) rocking curve were around 6°and 7°, respectively, the surface roughness was less than 2 nm over an area of 1μm×1μm observed by AFM. It was found that the CeO2 thin film improved both the in-plane orientation and surface roughness of the Ni5W substrate, indicating that the as deposited CeO2 films were suitable for the further growth of YBCO superconductor layer.

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Periodical:

Materials Science Forum (Volumes 546-549)

Edited by:

Yafang Han et al.

Pages:

2011-2014

Citation:

Y. X. Zhang et al., "Epitaxial Growth of CeO2 Buffer Layers on Both YSZ Single Crystal and Textured Ni5W Substrates by MOD Method", Materials Science Forum, Vols. 546-549, pp. 2011-2014, 2007

Online since:

May 2007

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$38.00

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