Comparative Studies of Nanoscale SiC Whisker and Si/N/C Doped MgB2 Tapes


Article Preview

Fe-sheathed MgB2 tapes were prepared by the in situ powder-in-tube (PIT) technique using nanoscale Si/N/C and SiC whisker as doping materials, respectively. It is found that the doped tapes exhibited superior field performance and higher critical current (JC) values than the undoped tapes in the magnetic field up to 12 T. Moreover, the improvement of JC for the SiC whisker doped samples was more significantly than that in Si/N/C doped tapes, while flux pinning ability enhancements were similar. It is proposed that the difference of impurity content in MgB2 matrix, which affects the grain connectivity, is responsible for JC value difference between Si/N/C and SiC whisker doped samples.



Materials Science Forum (Volumes 546-549)

Edited by:

Yafang Han et al.




X. P. Zhang et al., "Comparative Studies of Nanoscale SiC Whisker and Si/N/C Doped MgB2 Tapes", Materials Science Forum, Vols. 546-549, pp. 2041-2045, 2007

Online since:

May 2007




[1] C.P. Chen, Q.R. Feng, Z.Z. Gan, G.C. Xiong, J. Xu, Y.F. Liu, L.W. Kong, L. Li, Z. Jia, J.P. Guo, C.G. Zhuang, L.L. Ding, L.P. Chen and K.C. Zhang: Chin. Sci. Bull. Vol. 50 (2005), p.719.

[2] W. Pachla, A. Morawski, P. Kovac, I. Husek, A. Mazur, T. Lada, R. Diduszko, T. Melisek, V. Strbık and M. Kulczyk: Supercond. Sci. Technol. Vol. 19(2006), p.1.


[3] R. Flukiger, H.L. Suo, N. Musolino, C. Beneduce, P. Toulemonde and P. Lezza: Physica C Vol. 385 (2003), p.286.


[4] Y. Feng, G. Yan, Y. Zhao, P.X. Zhang, E. Mossang, A. Suipice and L. Zhou: Physica C Vol. 426 (2005), p.1216.

[5] Y.W. Ma, H. Kumakura, A. Matsumoto and K. Togano: Appl. Phys. Lett. Vol. 83 (2003), p.1181.

[6] A. Matsumoto, H. Kumakura, H. Kitaguchi and H. Hatakeyama: Supercond. Sci. Technol. Vol. 17 (2004), p. S319.

[7] Y.W. Ma, X.P. Zhang, G. Nishijima, K. Watanabe, S. Awaji and X.D. Bai: Appl. Phys. Lett. Vol. 88 (2006), p.072502.

[8] A. Yamamoto, J.I. Shimoyama, S. Ueda, I. Iwayama, S. Horii and K. Kishio: Supercond. Sci. Technol. Vol. 18 (2005), p.1323.

[9] X.P. Zhang, Y.W. Ma, Z.S. Gao, Z.G. Yu, G. Nishijima and K. Watanabe: Supercond. Sci. Technol. Vol. 19 (2006), p.479.

[10] S. Soltanian, X.L. Wang, J. Horvat, S.X. Dou, M.D. Sumption, M. Bhatia, E.W. Collings, P. Munroe and M. Tomsic: Supercond. Sci. Technol. Vol. 18 (2005), p.658.


[11] H. Kumakura, H. Kitaguchi, A. Matsumoto and H. Hatakeyama: Appl. Phys. Lett. Vol. 84 (2004), p.3669.

[12] Y.W. Ma, X.P. Zhang, A.X. Xu, X.H. Li, L.Y. Xiao, G. Nishijima, S. Awaji, K. Watanabe, Y.L. Jiao, L. Xiao, X.D. Bai, K.H. Wu and H.H. Wen: Supercond. Sci. Technol. Vol. 19 (2006), p.133.

[13] S.X. Dou, V. Braccini, S. Soltanian, R. Klie, Y. Zhu, S. Li, X.L. Wang and D.C. Larbalestier: J. Appl. Phy. Vol. 96 (2004), p.7549.

[14] S. Li, T. White, C.Q. Sun, Y.Q. Fu, J. Plevert and K. Lauren: J. Phys. Chem. B Vol. 108 (2004), p.16415.

[15] R.H.T. Wilke, S.L. Bud'ko, P.C. Canfield, D.K. Finnemore, R.J. Suplinskas and S.T. Hannahs: Phys. Rev. Lett. Vol. 92 (2004), p.217003.

[16] M.D. Sumption, M. Bhatia, E.W. Collings, M. Rindfleisch, M. Tomsic, S. Soltanian, S.X. Dou and E.W. Collings: Appl. Phys. Lett. Vol. 86 (2005), p.092507.


[17] C.H. Jiang, T. Nakane and H. Kumakura: Supercond. Sci. Technol. Vol. 18 (2005), p.902.