MgB2 Thick Film Grown on Silicon Carbide Substrate by Hybrid Physical-Chemical Vapor Deposition
We have successfully synthesized MgB2 thick films on 4H-SiC substrate by hybrid physical-chemical deposition (HPCVD). They have TC above 40 K, X-ray diffraction (XRD) shows the polycrystal bulk like structure. And JC estimated using magnetic hysteresis loops (MHLs) and Bean model is 7.4 MA/cm2 in self field, at 5 K.
Yafang Han et al.
F. Li et al., "MgB2 Thick Film Grown on Silicon Carbide Substrate by Hybrid Physical-Chemical Vapor Deposition", Materials Science Forum, Vols. 546-549, pp. 2067-2070, 2007