MgB2 Thick Film Grown on Silicon Carbide Substrate by Hybrid Physical-Chemical Vapor Deposition

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We have successfully synthesized MgB2 thick films on 4H-SiC substrate by hybrid physical-chemical deposition (HPCVD). They have TC above 40 K, X-ray diffraction (XRD) shows the polycrystal bulk like structure. And JC estimated using magnetic hysteresis loops (MHLs) and Bean model is 7.4 MA/cm2 in self field, at 5 K.

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Periodical:

Materials Science Forum (Volumes 546-549)

Edited by:

Yafang Han et al.

Pages:

2067-2070

Citation:

F. Li et al., "MgB2 Thick Film Grown on Silicon Carbide Substrate by Hybrid Physical-Chemical Vapor Deposition", Materials Science Forum, Vols. 546-549, pp. 2067-2070, 2007

Online since:

May 2007

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