Effects of γ-Ray Irradiation on Structure and Properties of ZnO:Al Thin Film

Abstract:

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ZnO:Al(ZAO) thin film is a kind of transparent conductive functional material which has a potential application in the solar cell and Atom Oxygen resisting systems of spacecrafts. High performance ZAO thin films were prepared by reactive magnetron sputtering and then irradiated by γ-ray with different dose or rate of irradiation. The as-deposited sample and irradiated ones were characterized by X-ray Diffraction, Scanning Electron Microscopy and Hall-effect measurement to investigate the dependences of the structure, morphology and electrical properties of ZAO on the dose and rate of γ-ray irradiation. Measurement of Positron Annihilation Doppler-Broadening Spectroscopy was carried out to study the variation of the defects in ZAO thin films before and after irradiation. It is indicated that γ-ray will excite the carriers, which are electrons in ZAO. A high rate of γ-ray irradiation could slightly destroy the bonds of Zn-O and decrease the crystallinity, while the effect of low rate irradiation is similar to heat annealing and increase the crystallinity of ZAO thin films. γ-ray has no apparent influences on the negative vacancy defects in ZAO thin film.

Info:

Periodical:

Materials Science Forum (Volumes 546-549)

Edited by:

Yafang Han et al.

Pages:

2137-2142

DOI:

10.4028/www.scientific.net/MSF.546-549.2137

Citation:

W. W. Wang and T. M. Wang, "Effects of γ-Ray Irradiation on Structure and Properties of ZnO:Al Thin Film", Materials Science Forum, Vols. 546-549, pp. 2137-2142, 2007

Online since:

May 2007

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$35.00

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