Magnetic and Transport Properties of Mn-Si Films Synthesized on 4H-SiC(0001) Substrates
We report a systematic study of the thickness dependence of magnetic properties in carbon-incorporated Mn-Si films synthesized on a 4H-SiC(0001) homoepitaxial wafer by molecular beam epitaxy (MBE) and an annealing method. Magnetization characteristics reveal a dual-phase characteristic in films with decreasing thickness. The anomalous Hall effect has been observed in the thicker film; however, the observed temperature dependence cannot be explained by traditional anomalous Hall effect theory. The temperature dependent resisitivity indicates the film has a metallic behavior.
Yafang Han et al.
W. H. Wang et al., "Magnetic and Transport Properties of Mn-Si Films Synthesized on 4H-SiC(0001) Substrates", Materials Science Forum, Vols. 546-549, pp. 2167-2170, 2007