Magnetic and Transport Properties of Mn-Si Films Synthesized on 4H-SiC(0001) Substrates

Abstract:

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We report a systematic study of the thickness dependence of magnetic properties in carbon-incorporated Mn-Si films synthesized on a 4H-SiC(0001) homoepitaxial wafer by molecular beam epitaxy (MBE) and an annealing method. Magnetization characteristics reveal a dual-phase characteristic in films with decreasing thickness. The anomalous Hall effect has been observed in the thicker film; however, the observed temperature dependence cannot be explained by traditional anomalous Hall effect theory. The temperature dependent resisitivity indicates the film has a metallic behavior.

Info:

Periodical:

Materials Science Forum (Volumes 546-549)

Edited by:

Yafang Han et al.

Pages:

2167-2170

DOI:

10.4028/www.scientific.net/MSF.546-549.2167

Citation:

W. H. Wang et al., "Magnetic and Transport Properties of Mn-Si Films Synthesized on 4H-SiC(0001) Substrates", Materials Science Forum, Vols. 546-549, pp. 2167-2170, 2007

Online since:

May 2007

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Price:

$35.00

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