Modeling and Investigation of SiGe Based MOSFET Structure Transport Characteristics


Article Preview

The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.



Edited by:

Dragan P. Uskoković, Slobodan K. Milonjić and Dejan I. Raković




P.M. Lukić et al., "Modeling and Investigation of SiGe Based MOSFET Structure Transport Characteristics", Materials Science Forum, Vol. 555, pp. 101-106, 2007

Online since:

September 2007




[1] R. Ramović and R. Šašić: Analise and Modeling of Small Dimensions Unipolar Transistors (Dinex, Belgrade 1999) (in Serbian).

[2] P.M. Lukić: New Analytical Models of Heterostructure Unipolar Transistors, PhD Dissertation (Faculty of Electrical Engineering, University of Belgrade 2005) (in Serbian).

[3] R. Šašić: Quasy Two-Dimensional analytical and numerical models of electron transpotrt in MOS Structures, MSc Degree These (Faculty of Electrical Engineerring, University of Belgrade 1993) (in Serbian).

[4] P.M. Lukić, R.M. Ramović and R.M. Šašić: J. Optoel. Advan. Mat. Vol. 7(3) (2005), p.1611.

[5] R.M. Ramović, R.M. Šašić and P.M. Lukić: J. Optoel. Advan. Mat. Vol. 8(4) (2006), p.1418.

[6] A. Abramo, F. Venturi and M.R. Binto: IEEE Electron Device Letters Vol. 17(2) (1996), p.59.

[7] M. Arafa, P. Fay, K. Ismaili, J.O. Chu, B.S. Meyerson and I. Aseida: IEEE Electron Device Letters Vol. 17(3) (1996), p.124.

[8] Y. -C. Yeo, V. Subramanian, J. Kedzierski, P. Xuan, T. -J. King, J. Bokor and C. Hu: IEEE Transactions on Electron Devices Vol. 49(2) (2002), p.279.

[9] P.M. Lukić, R.M. Ramović and R.M. Šašić: Mat. Sci. Forum Vol. 494 (2005), p.43.

[10] P.M. Lukić: Bulletin Vinča Institute of Nuclear Sciences Vol. 8 (2003), p.70 (in Serbian).

[11] P.M. Lukić, R.M. Ramović and R.M. Šašić: Proceedings of the 25th International Conference on Microelectronics (MIEL 2006. ), Vol. 2, pp.505-508.

[12] P. Roblin, H. Rohdin: High - speed heterostructure devices (Cambridge University Press, 2002).

[13] Y.P. Tsividis: Operation and Modeling of the MOS Transistors (MsGrow Hill 1988).

[14] V. Aubry-Fortuna, P. Dollfus, S. Galdin-Retailleau: Solid-State Electronics Vol. 49 (2005), p.1320.

DOI: 10.1016/j.sse.2005.06.013

Fetching data from Crossref.
This may take some time to load.