Paper Title:
Modeling and Investigation of SiGe Based MOSFET Structure Transport Characteristics
  Abstract

The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.

  Info
Periodical
Edited by
Dragan P. Uskoković, Slobodan K. Milonjić and Dejan I. Raković
Pages
101-106
DOI
10.4028/www.scientific.net/MSF.555.101
Citation
P.M. Lukić, R.M. Ramović, R. M. Šašić, "Modeling and Investigation of SiGe Based MOSFET Structure Transport Characteristics", Materials Science Forum, Vol. 555, pp. 101-106, 2007
Online since
September 2007
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Price
$35.00
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