Modeling and Investigation of SiGe Based MOSFET Structure Transport Characteristics

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The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.

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Edited by:

Dragan P. Uskoković, Slobodan K. Milonjić and Dejan I. Raković

Pages:

101-106

Citation:

P.M. Lukić et al., "Modeling and Investigation of SiGe Based MOSFET Structure Transport Characteristics", Materials Science Forum, Vol. 555, pp. 101-106, 2007

Online since:

September 2007

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$38.00

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DOI: https://doi.org/10.1016/j.sse.2005.06.013

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