Plasma Etching for the Application to Low-K Dielectrics Devices

Abstract:

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We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.

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Periodical:

Edited by:

Dragan P. Uskoković, Slobodan K. Milonjić and Dejan I. Raković

Pages:

113-118

Citation:

J. W. Lee et al., "Plasma Etching for the Application to Low-K Dielectrics Devices", Materials Science Forum, Vol. 555, pp. 113-118, 2007

Online since:

September 2007

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$38.00

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DOI: https://doi.org/10.1016/j.tsf.2005.08.089

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