Influence of Charging on SiO2 Etching Profile Evolution Etched by Fluorocarbon Plasmas


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A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. The ion and electron fluxes were computed along the feature using the Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving the Laplace equation using finite elements method. Calculations were performed in the case of a simplified model of Ar+/CF4 nonequilibrium plasma etching of SiO2.



Edited by:

Dragan P. Uskoković, Slobodan K. Milonjić and Dejan I. Raković




B. Radjenović et al., "Influence of Charging on SiO2 Etching Profile Evolution Etched by Fluorocarbon Plasmas", Materials Science Forum, Vol. 555, pp. 53-58, 2007

Online since:

September 2007




[1] J. Sethian: Level Set Methods and Fast arching Methods: Evolving Interfaces in Computational Geometry, Fluid Mechanics, Computer Vision and Materials Sciences (Cambridge University Press, Cambridge, UK 1998).


[2] S. Osher and R. Fedkiw: Level Set Method and Dynamic Implicit Surfaces (Springer 2002).

[3] Y. Yoshida and T. Watanabe: Proceedings of the Symp. Dry Process (Tokyo 1983), p.4.

[4] K. Hashimoto: Jpn. J. Appl. Phys. Vol. 33 (1994), p.6013.

[5] R. Whitaker: The International Journal of Computer Vision Vol. 29(3) (1998), p.203.

[6] B. Radjenović, J.K. Lee and M. Radmilović-Radjenović: Computer Physics Communications Vol. 174 (2006), p.127.

[7] C. Geuzaine: High order hybrid finite element schemes for Maxwell's equations taking thin structures and global quantities into account, Ph. D. Thesis (Universite de Liege 2001).

[8] GetDP: http: /www. geuz. org/getdp.

[9] TetGen: http: /tetgen. berlios. de.

[10] G. Hwang and K. Giapis: Journal of Vacuum Science and Technology Vol. B 15(1) (1997), p.70.

[11] A. Mahorowala and H. Sawin: Journal of Vacuum Science and Technology Vol. B 20(3) (2002), p.1084.

[12] H.S. Park, S.J. Kim, Y.Q. Wu and J.K. Lee: IEEE Transactions on Plasma Science Vol. 31 (2003), p.703.

[13] M. Lieberman and A. Lichtenberg: Principles of Plasma Discharges and Materials Processing (John Wiley & Sons, Inc. 1994).

[14] C.K. Birdsall: IEEE Transactions on Plasma Science Vol. 19 (1991), p.65.

[15] J.P. Verboncoeur, M.V. Alves, V. Vahedi and C. Birdsall: Journal of Computational Physics Vol. 104 (1993), p.321.

[16] H.C. Kim, F. Iza, S.S. Yang, M. Radmilović-Radjenović and J.K. Lee: Journal of Physics D: Applied Physics Vol. 38 (2005), p. R283.