Structural and Magnetic Properties of the Zn-Mn-O System


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Zn-Mn-O semiconductor crystallites with nominal manganese concentration x = 0.01, 0.02, 0.04 and 0.10 were synthesized by a solid state reaction route using oxalate precursors. Thermal treatment procedure was carried out in air at different temperatures in the range 400 - 900°C. The samples were investigated by X-ray diffraction, magnetization measurements and electron paramagnetic resonance. X-ray analysis reveals that dominant crystal phase in the Zn-Mn-O system corresponds to the wurtzite structure of ZnO. Room temperature ferromagnetism is observed in the Zn-Mn-O samples with lower manganese concentration, x ≤ 0.04, thermally treated at low temperature (500°C). Saturation magnetization in the sample with x = 0.01 is found to be 0.05 μB/Mn. The ferromagnetic phase seems to be developed by Zn diffusion into Mn-oxide grains.



Edited by:

Dragan P. Uskoković, Slobodan K. Milonjić and Dejan I. Raković




D. Milivojević et al., "Structural and Magnetic Properties of the Zn-Mn-O System", Materials Science Forum, Vol. 555, pp. 95-100, 2007

Online since:

September 2007




[1] S.J. Pearton, W.H. Heo, M. Ivill, D.P. Norton and T. Steiner: Semicond. Sci. Technol. Vol. 19 (2004), p. R59.

DOI: 10.1088/0268-1242/19/10/r01

[2] J.M.D. Coey and S. Sanvito: J. Phys. D: Appl. Phys. Vol. 37 (2004), p.988.

[3] T. Dietl: Semicond. Sci. Technol. Vol. 17 (2002), p.377.

[4] T. Dietl, H. Ohno, F. Matsukura, J. Cibert and D. Ferrand: Science Vol. 287 (2000), p.1019.

[5] P. Sharma, A. Gupta, K.V. Rao, F.K. Owens, R. Sharma, R. Ahuja, J.M. Osorio Guillen, B. Johansson and G.A. Gehring: Nat. Mater. Vol. 2 (2003), p.673.

[6] D.C. Kundaliya, S.B. Ogale, S.E. Lofland, S. Dhar, C.J. Metting, S.R. Shinde, Z. Ma, B. Varughese, K.V. Ramanujachary, L. Salamanca-Riba and T. Vankatesan: Nat. Mater. Vol. 3 (2004), p.709.

DOI: 10.1038/nmat1221

[7] J. Zhang, R. Skomski and D.J. Sellmyer: J. Appl. Phys. Vol. 97 (2005), p. 10D303.

[8] J.L. Costa-Cramer, F. Briones, J.F. Fernandez, A.C. Caballero, M. Villegas, M. Diaz, M.A. Garcia and A. Hernando: Nanotechnology Vol. 16 (2005), p.214.

[9] M.A. Garcia, M.L. Ruiz-Gonzáles, A. Quesada, J.L. Costa-Krämer, J.F. Fernández, S.J. Khatib, A. Wennberg, A.C. Cabarello, M.S. Martin- Gonzáles, M. Villegas, F. Briones, J.M. Gonzáles-Calbet and A. Hernando: Phys. Rev. Lett. Vol. 94 (2005).

DOI: 10.1103/physrevlett.94.217206

[10] W. Chen, L.F. Zhao, Y.Q. Wang, J.H. Miao, S. Liu, Z.C. Xia and S.L. Yuan: Solid State Commun. Vol. 134 (2005), p.827.

[11] S. Kolesnik, B. Dabrowski and J. Mais: J. Appl. Phys. Vol. 95 (2004), p.2582.

[12] G. Lawes, A.S. Risbud, A.P. Ramirez and R. Seshadri: Phys. Rev. B Vol. 71 (2005), p.045201.

[13] H.W. Zhang, E.W. Shi, Z.Z. Chen, X.C. Liu and B. Xiao: Solid State Commun. Vol. 137 (2006), p.272.

[14] M. Kakazey, M. Vlasova and M. Dominguez-Patino: J. Am. Ceram. Soc. Vol. 89 (2006), p.1458.

[15] O.D. Jayakumar, H.G. Salunke, R.M. Kadam, M. Mohapatra, G. Yaswant and S.K. Kulshreshtha: Nanotechnology Vol. 17 (2006), p.1278.

[16] W. Chen, L.F. Zhao, Y.Q. Wang, J.H. Miao, S. Liu, Z.C. Xia and S.L. Yuan: Appl. Phys. Lett. Vol. 87 (2005), p.042507.

[17] K.R. Kittilstved, N.S. Norberg and P.R. Gamelin: Phys. Rev. Lett. Vol. 94 (2005), p.147209.

[18] A. Manivannan, P. Dutta, G. Glaspell and M.S. Seehra: J. Appl. Phys. Vol. 99 (2006), p. 08M110.

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