New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process


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In this paper, we propose new designs of Schottky, JBS and PiN diodes, which process technology is compatible with that of vertical power SiC JFETs. Three novel diode designs are proposed and we report their electrical characteristics. The P+ buried layer implant of the JFET is used for the PiN anode formation and for the P+ islands of the JBS. The Schottky diode differs from a standard Schottky diode since buried rings below the Schottky contact region have been included and the anode metal layer also contacts the buried P+ region at the diode periphery. With this last approach, the resulting Schottky diodes show low leakage currents and surge current capability, with a lower on-state voltage than the JBS.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




P. Brosselard et al., "New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process", Materials Science Forum, Vols. 556-557, pp. 1003-1006, 2007

Online since:

September 2007




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DOI: 10.4028/

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