OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes


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High voltage SiC semiconductor devices have been successfully fabricated and some of them are commercially available [1]. To achieve experimental breakdown voltage values as close as possible to the theoretical value, i.e. value of the theoretical semi-infinite diode, it is necessary to protect the periphery of the devices against premature breakdown due to locally high electric fields. Mesa structures and junction termination extension (JTE) as well as guard rings, and combinations of these techniques, have been successfully employed. Each of them has particular drawbacks. Especially, JTE are difficult to optimize in terms of impurity dose to implant, as well as in terms of geometric dimensions. This paper is a study of the spreading of the electric field at the edge of bipolar diodes protected by JTE and field rings, by optical beam induced current.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




C. Raynaud et al., "OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes", Materials Science Forum, Vols. 556-557, pp. 1007-1010, 2007

Online since:

September 2007




[1] SiCED Electronics Development GmbH, http: /www. siced. de.

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[3] R. Perez Rodriguez: Planar edge terminations and related manufacturing process technology for high power 4H-SiC diodes,. Ph.D. thesis. Universitat Autonoma de Barcelona, (2005), p.223.

[4] V. V. Afanasev et al.: Microelectronic Engin. Vol. 28 (1995), p.197.

[5] C. Raynaud: J. Non-Crystalline Solids Vol. 280 (2001), p.1.