High Quality Uniform SiC Epitaxy for Power Device Applications


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In this paper we present highly uniform SiC epitaxy in a horizontal hot-wall CVD reactor with wafer rotation. Epilayers with excellent thickness uniformity of better than 1% and doping uniformity better than 5% are obtained on 3-in, 4° off-axis substrates. The same growth conditions for uniform epitaxy also generate smooth surface morphology for the 4° epiwafers. Well controlled doping for both n- and p-type epilayers is obtained. Abrupt interface transition between n- and pdoped layers in a wide doping range is demonstrated. Tight process control for both thickness and doping is evidenced by the data collected from the epi operations. The average deviation from target is 2.5% for thickness and 6% for doping. PiN diodes fabricated on a standard 3-in, 4° epiwafer have shown impressive performance. More than half of the 1 mm2 devices block 1 kV (2.3 MV/cm) with a low leakage current of 1 μA.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall






J. Zhang et al., "High Quality Uniform SiC Epitaxy for Power Device Applications", Materials Science Forum, Vols. 556-557, pp. 101-104, 2007

Online since:

September 2007




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[5] J. Zhang, J. Mazzola, C. Hoff, C. Rivas, E. Romano, J.R.B. Casady, M. Mazzola, J.B. Casady and K. Matocha, presented at ICSCRM2005, Pittsburgh, USA, October, 2005 Fig. 5: Deviation from target in percentage for both thickness and doping from a series of epi runs on 3in, 4° wafers. -30. 0% -20. 0% -10. 0.

DOI: 10.4028/www.scientific.net/msf.527-529.195


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