High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism

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The growth of 3C-SiC polycrystal and 6H-SiC homoepitaxial layers from Metal-Si alloys is carried out as function of temperature and propane partial pressure. Based on the vapourliquid- solid mechanism, we present a new configuration for the growth of SiC which could allow first to simplify the liquid handling at high temperature and second to precisely control the crystal growth front. 3C-SiC crystals exhibiting well-faceted morphology are obtained at 1100-1200°C with outstanding deposition rates, varying from 1 to 1.5 mm/h in Ti-Si melt. At 1200-1300°C, thick homoepitaxial 6H-SiC layers were successfully obtained in Co-Si melts, with growth rates up to 200 ,m/h. Details on the experiments will be given and the potentialities of such process for the growth of bulk crystals will be discussed..

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

105-108

DOI:

10.4028/www.scientific.net/MSF.556-557.105

Citation:

N. Boutarek et al., "High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism", Materials Science Forum, Vols. 556-557, pp. 105-108, 2007

Online since:

September 2007

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Price:

$35.00

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