High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism
The growth of 3C-SiC polycrystal and 6H-SiC homoepitaxial layers from Metal-Si alloys is carried out as function of temperature and propane partial pressure. Based on the vapourliquid- solid mechanism, we present a new configuration for the growth of SiC which could allow first to simplify the liquid handling at high temperature and second to precisely control the crystal growth front. 3C-SiC crystals exhibiting well-faceted morphology are obtained at 1100-1200°C with outstanding deposition rates, varying from 1 to 1.5 mm/h in Ti-Si melt. At 1200-1300°C, thick homoepitaxial 6H-SiC layers were successfully obtained in Co-Si melts, with growth rates up to 200 ,m/h. Details on the experiments will be given and the potentialities of such process for the growth of bulk crystals will be discussed..
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
N. Boutarek et al., "High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism", Materials Science Forum, Vols. 556-557, pp. 105-108, 2007