Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection


Article Preview

Homoepitaxial growth of 4H-SiC p+/π/n- multi-epilayer on n+ substrate and in-situ doping of p+ and π-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H2. The surface morphologies, homogeneities and doping concentrations of the n--single-epilayers and the p+/π/n- multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in π layer. The UV photodetectors fabricated on 4H-SiC p+/π/n- multi-epilayers showed low dark current and high detectivity in the UV range.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




X. F. Liu et al., "Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection ", Materials Science Forum, Vols. 556-557, pp. 109-112, 2007

Online since:

September 2007




[1] X. P. Chen, W. F. Yang and Z. Y. Wu: Microelectron. Eng. Vol. 83 (2006), p.104.

[2] Z. Wu, X. Xin, F. Yan and J. H. Zhao: Mater. Sci. Forum Vol. 457-460 (2004), p.1491.

[3] F. Yan, X. B. Xin, S. Aslam, Y. G. Zhao, D. Franz, J. H. Zhao and M. Weiner: IEEE J Quantum Elect. Vol. 40 (2004) p.1315.

[4] A. R. Powell and L. B. Rowland: Proc. IEEE Vol. 90 (2002), p.942.

[5] X. Guo, A. L. Beck, X. Li, J. C. Campbell, D. Emerson and J. Sumakeris: IEEE J Quantum Elect. Vol. 41 (2005), p.562.

[6] T. Kimoto and H. Matsunami: J Appl. Phys. Vol. 75 (1994), p.850.

[7] D. J. Larkin, P. G. Neudeck, J. A. Powell and L. G. Matus: Appl. Phys. Lett. Vol. 65 (1994), p.1659.

[8] M. K. Linnarsson, M. S. Janson, N. Nordell, J. Wong-Leung and A. Schoner: Appl. Surf. Sci. Vol. 252 (2006), p.5316.

[9] K. Kazutoshi, K. Satoshi, O. Hajime and A. Kazuo: Appl. Phys. Lett. Vol. 88 (2006), 021907.

[10] G. Wagner, W. Leitenberger, K. Irmscher, F. Schmid, M. Laube and G. Pensl: Mater. Sci. Forum Vol. 389-3 (2002), p.207.

[11] T. Kimoto, S. Nakazawa, K. Fujihira, T. Hirao, S. Nakamura, Y. Chen, K. Hashimoto and H. Matsunami: Mater. Sci. Forum Vol. 389-3 (2002), p.165.

DOI: 10.4028/www.scientific.net/msf.389-393.165

[12] S. Nakashima and H. Harima: Phys. Stat. Sol. (a) Vol. 162 (1997).

Fetching data from Crossref.
This may take some time to load.