Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection
Homoepitaxial growth of 4H-SiC p+/π/n- multi-epilayer on n+ substrate and in-situ doping of p+ and π-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H2. The surface morphologies, homogeneities and doping concentrations of the n--single-epilayers and the p+/π/n- multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in π layer. The UV photodetectors fabricated on 4H-SiC p+/π/n- multi-epilayers showed low dark current and high detectivity in the UV range.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
X. F. Liu et al., "Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection ", Materials Science Forum, Vols. 556-557, pp. 109-112, 2007