Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate


Article Preview

Fast homoepitaxial growth of 4H-SiC has been carried out on off-axis (0001) substrates by horizontal hot-wall CVD at 1600οC. High growth rate up to 24 μm/h has been achieved with mirror-like surface in the C/Si ratio range of 1.0-2.0. The Z1/2 and EH6/7 concentrations can be kept as low as 7 × 1011 cm-3 and 3 × 1011 cm-3, although an unknown trap (UT1) is observed with the concentration in the 1011 cm-3 range. The photoluminescence spectra are dominated by strong free exciton peaks, and the L1 peak is not observed. The basal-plane dislocation (BPD) density has decreased with increase in growth rate, and it can be reduced to 22 cm-2 when epilayers are grown on Chemical Mechanically Polished (CMP) substrates at a growth rate of 24 μm/h.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




T. Hori et al., "Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate ", Materials Science Forum, Vols. 556-557, pp. 129-132, 2007

Online since:

September 2007




[1] K. Fujihira, T. Kimoto and H. Matsunami: J. Cryst. Growth Vol. 255 (2003), p.136.

[2] H. Tsuchida, I. Kamata, T. Jikimoto and K. Izumi: Mater. Sci. Forum Vol. 389-393 (2002), p.171.

[3] T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki and K. Arai: J. Cryst. Growth Vol. 271 (2004), p.1.

[4] J. Zhang, L. Storasta, J. P. Bergman, N. T. Son and E. Janzén: J. Appl. Phys. Vol. 93 (2003), p.4708.

[5] J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm and H. Lendenmann: Mater. Sci. Forum Vol. 353-356 (2001), p.299.

[6] T. Kimoto, S. Nakazawa, K. Hashimoto and H. Matsunami: Appl. Phys. Lett. Vol. 79 (2001), p.2761.

[7] K. Danno, K. Hashimoto, H. Saitoh, T. Kimoto and H. Matsunami: Jpn. J. Appl. Phys. Vol. 43 (2004), p. L969.

[8] T. Tsuchida, T. Miyanagi, I. Kamata, T. Nakamura, K. Izumi, K. Nakayama, R. Ishii, K. Asano and Y. Sugawara: Mater. Sci. Forum Vol. 483-485 (2005), p.97.

[9] S. Ha, P. Mieszkowski, M. Skowronski and L. B. Rowland: J. Cryst. Growth Vol. 244 (2002), p.257. Fig. 7: Growth rate dependence of the ratio of BPD density in epilayers to that in substrates.

Fetching data from Crossref.
This may take some time to load.