Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization


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High growth rate of 4H-SiC epitaxial layers can be reached with the introduction of HCl in the deposition chamber. The effect of the Cl/Si ratio on this epitaxial growth process has been studied by optical and electrical measurements. Optical microscopy shows an improvement of the surface morphology and luminescence measurements reveal a decrease of epitaxial layer defects with increasing the Cl/Si ratio in the range 0.05–2.0. The leakage current measured on the diodes realized on these wafers is reduced of an order of magnitude and DLTS measurements show a decrease of the EH6,7 level concentration in the same range of Cl/Si ratio. The value Cl/Si=2.0 allows to grow epitaxial layers with the lowest defect concentration.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




L. Calcagno et al., "Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization", Materials Science Forum, Vols. 556-557, pp. 137-140, 2007

Online since:

September 2007




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