In addition to possessing unique electrical properties, silicon carbide (SiC) can crystallize in different modifications (polytypes). Having the same chemical nature, SiC polytypes may significantly differ in their electrical parameters. In recent years, the world's interest in fabrication and study of heteropolytype structures based on silicon carbide has considerably increased. This paper considers studies concerned with fabrication of various types of heterostructures constituted by different SiC polytypes by sublimation epitaxy, and their electrical parameters. It is shown that heterostructures between SiC polytypes may have a better structural perfection than those constituted by semiconductors that differ in chemical nature. A conclusion is made that SiC-based heterostructures are promising for application in modern electronic devices.