Carbonization of Porous Silicon for 3C-SiC Growth

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In the present work, the carbonization of porous silicon for the subsequent 3C-SiC growth has been systematically studied. The effect of temperature and acetylene flow-rate on the chemical state of the surface and structure relaxation was studied. It was found that the porous nano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of 3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, but at 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was found on porous silicon carbonized at temperature and with acetylene flow-rate above critical values.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

167-170

DOI:

10.4028/www.scientific.net/MSF.556-557.167

Citation:

A.V. Vasin et al., "Carbonization of Porous Silicon for 3C-SiC Growth", Materials Science Forum, Vols. 556-557, pp. 167-170, 2007

Online since:

September 2007

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Price:

$35.00

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