Carbonization of Porous Silicon for 3C-SiC Growth
In the present work, the carbonization of porous silicon for the subsequent 3C-SiC growth has been systematically studied. The effect of temperature and acetylene flow-rate on the chemical state of the surface and structure relaxation was studied. It was found that the porous nano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of 3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, but at 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was found on porous silicon carbonized at temperature and with acetylene flow-rate above critical values.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
A.V. Vasin et al., "Carbonization of Porous Silicon for 3C-SiC Growth", Materials Science Forum, Vols. 556-557, pp. 167-170, 2007