Carbonization Study of Different Silicon Orientations

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3C-SiC/Si heteroepitaxy is hampered by large mismatches in lattice parameters (19.7%) and thermal expansion coefficient (8%) leading to 3C-SiC films containing high defects density. To reduce the presence of defects, a multi-step growth process in a CVD reactor is used. The aim of the work is to study the effect of carbonization on differently oriented Si surfaces, experiencing a 200°C-wide temperature range in a CVD reactor, to improve the crystalline quality. TEM analysis are carried out to evaluate thickness, crystal orientations and defects of carbonized layers with respect to the time-dependence of the process and to the different orientations of the Si substrate. It will be shown that process-related defects are strictly correlated to the substrate orientation either for size, density, occupied area, shape or thickness. Uniform, flat and crystalline thin SiC films are obtained with a low defect density.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

171-174

Citation:

A. Severino et al., "Carbonization Study of Different Silicon Orientations ", Materials Science Forum, Vols. 556-557, pp. 171-174, 2007

Online since:

September 2007

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$38.00

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