Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates


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3C-SiC epitaxial layers with a thickness of up to 100 μm and area of ~0.3-0.5 cm2 have been grown by sublimation epitaxy on hexagonal (6H-SiC) substrates at a maximum growth rate of about 200 μm per hour. The epilayers obtained are of n-type (Nd-Na ~ 1017 -1018 cm-3). According to X-ray data, the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The donor-acceptor (Al-N) recombination band with hνmax ~ 2.12 eV predominates in the photoluminescence (PL) spectrum. A detailed analysis of a PL spectrum measured at 6 K is presented. A conclusion is made that the epitaxial layers can be used as substrates for electronic devices based on 3C-SiC.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




A. A. Lebedev et al., "Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates", Materials Science Forum, Vols. 556-557, pp. 175-178, 2007

Online since:

September 2007




[1] A.A. Lebedev: Semicond. Sci. Technol. Vol. 21 (2006), p. R17.

[2] D.V. Davydov, A.A. Lebedev, A.S. Tregubova et. al: Mat. Science Forum Vol. 338-342 (2000), p.221.

[3] A.A. Lebedev, A.M. Strel'chuk, D.V. Davydov, N.S. Savkina, A.S. Tregubova, A.N. Kuznetsov, V.A. Solov'ev : N.K. Poletaev Semiconductors Vol. 37 (2003), p.482.

[4] N.S. Savkina, A.A. Lebedev, D.V. Davydov, A.M. Strel'chuk, A.S. Tregubova, C. Raynaud, J. - P. Chante, M. -L. Locatelli, D. Planson, J. Milan, P. Godignon, F.J. Campos, N. Mestres, J. Pascual, G. Brezeanu, M. Badila: Mat. Science & Eng. Vol. B77 (2000).

DOI: 10.1016/s0921-5107(00)00464-5

[5] A. Suzuki, H. Matsunami, T. Tanaka: J. Electochem Soc. : Solid-State Science and Technology, Vol. 124 (1977), p.241.

[6] M.E. Levinshtein, S.L. Ruyantsev and M.S. Shur: Properties of Advanced semiconductor Materials : GaN, AlN, InN, BN, SiC, SiGe" (John Wiley & Sons, Inc 2001).

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