How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism

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We report on the heteroepitaxial growth of 3C-SiC layers by Vapor-Liquid-Solid (VLS) mechanism on various α-SiC substrates, namely on- and off-axis for both 4H and 6H-SiC(0001), Si and C faces. The Si-Ge melts, which Si content was varied from 25 to 50 at%, were fed by 3 sccm of propane. The growth temperature was varied from 1200 to 1600°C. It was found that singledomain 3C-SiC layers can be obtained on 6H-SiC off and on-axis and 4H-SiC on-axis, while the other types of substrate gave twinned 3C-SiC material. As a general rule, one has to increase temperature when decreasing the Si content of the melt in order to avoid DPB formation. It was also found that twinned 3C-SiC layers form at low temperature while homoepitaxy is achieved at high temperature.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

187-190

Citation:

M. Soueidan et al., "How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism", Materials Science Forum, Vols. 556-557, pp. 187-190, 2007

Online since:

September 2007

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$38.00

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[11] -20] 50 µm b Fig. 4: surface morphology of single-domain 3C-SiC layers grown by VLS a) on 6HSiC 3. 5°off at 1300°C in Si50Ge50 and b) on 4H-SiC on-axis at 1350°C in Si25Ge75.