Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive

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Growth rates from 10 to 38 μm/h of single crystal 3C-SiC on planar Si (001) substrates have been obtained in a low-pressure horizontal hot-wall CVD reactor. The propane-silanehydrogen gas chemistry system with HCl added as a growth additive, which allows an increased amount of silane to be introduced into the reactor during growth, was used. The 3C-SiC film growth rate versus silane mole fraction was found to be a linear function in the range from 0.43x10-3 to 1.50x10-3. Nomarski optical microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy, atomic force microscopy and X-ray diffraction were used to characterize the deposited layers. The X-ray rocking curve taken on the (002) diffraction plane of a 12 μm thick 3CSiC (001) layer displayed a FWHM of 360 arcsec, which indicates the films are mono-crystalline.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

191-194

Citation:

M. Reyes et al., "Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive", Materials Science Forum, Vols. 556-557, pp. 191-194, 2007

Online since:

September 2007

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$41.00

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