Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC


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The effect of initial growth condition of 3C-SiC growth on the C-face of 6H-SiC has been studied in sublimation epitaxy. The initial temperature increase to initiate the sublimation has a strong effect on the polytype formation using on-axis substrates. Polytype inclusions of 6H-SiC in the 3C-SiC layers is found to be related to spiral growth. The micropipe dissociation process is discussed. At the slowest ramp-up of the temperature the 3C-SiC does not contain any inclusions. In 1 degree off-oriented substrates there were no 3C-SiC formation. In this case the different ramp-up conditions has an influence on the heights of the steps.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




M. Syväjärvi et al., "Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC", Materials Science Forum, Vols. 556-557, pp. 195-198, 2007

Online since:

September 2007




[1] R. Yakimova, G. R. Yazdi, N. Sritirawisarn and M. Syväjärvi, Proc. International Conference on SiC and Related Materials, Pittsburgh, USA, Sept 18 - 23, 2005, Mater. Sci. Forum, in press.

[2] M. Syväjärvi, R. Yakimova, M. Tuominen, A. Kakanakova-Georgieva, M.F. MacMillan, A. Henry, Q. Wahab, and E. Janzén: J. Crystal Growth Vol. 197 (1999), p.155.


[3] T. Kimoto, A. Itoh, H. Matsunami, and T. Okano. J. Appl. Phys. Vol. 81 (1997), p.3494.