Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis

Abstract:

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The development of 3C-SiC crystals from <0001> oriented hexagonal seed has always suffered from the systematic twinning which appears during the nucleation step of the layer. Using the continuous feed – Physical Vapour Transport (CF-PVT) growth process, we succeeded in growing single domain 3C-SiC crystals. To explain that, we propose in this work, a model based on the interaction between the lateral expansion anisotropy of 3C-SiC nuclei and the step flow growth front. Depending on the step edges direction, we can obtain one 3C orientation developing simultaneously with the vanishing of the other one. This model is confirmed by cross sectional HRTEM observation of the α-β interface.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

199-202

DOI:

10.4028/www.scientific.net/MSF.556-557.199

Citation:

L. Latu-Romain et al., "Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis", Materials Science Forum, Vols. 556-557, pp. 199-202, 2007

Online since:

September 2007

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