Growth Induced Stacking Fault Formation in 4H-SiC

Abstract:

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C-plane substrates with off-orientation to <1120 > may stabilize the grown polytype, but the stacking fault density (SFD) increases from zero in the on-axis sample to 4500 cm-1 (7.7° off). The SF form preferentially at the seed-crystal-interface by a kinetically induced rearrangement of surface ad-atoms on m-facets. Most SF start in bundles with an average distance of 100 .m, which are subdivided in smaller bundles with 8 .m distance. They start preferentially from the upper corner of the vertical non-polar plane of bunched steps, which may be composed of small pyramids with m-facet surfaces. The dislocation density could decrease with increasing SFD by a pinning mechanism.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

21-24

DOI:

10.4028/www.scientific.net/MSF.556-557.21

Citation:

D. Siche et al., "Growth Induced Stacking Fault Formation in 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 21-24, 2007

Online since:

September 2007

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Price:

$35.00

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