Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence

Abstract:

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QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. In order to overcome the difficulty of limited thickness, an important improvement has been demonstrated, which consists in obtaining thick SiC structure by growing epitaxial SiC layers on top of transferred layers. The aim of this work is a structural analysis of such layers by Transmission Electron Microscopy and Photoluminescence.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

255-258

Citation:

I. Matko et al., "Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence", Materials Science Forum, Vols. 556-557, pp. 255-258, 2007

Online since:

September 2007

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$38.00

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