Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

Abstract:

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Synchrotron reflection X-ray topography and KOH etching were applied to investigate the effects of the ion implantation/annealing process on the existing dislocations in the 4H-SiC epilayers and second epitaxial growth on the ion implanted layer. No systematic generation of dislocations or stacking faults caused by the second epitaxial growth on the implanted layer was observed, while BPDs were confirmed to migrate in the epilayer during the implantation/annealing process. The BPDs bend markedly near the bottom of the implanted layer and tend to lie along the <1-100> (perpendicular to the off-cut direction) after the implantation/annealing process. The lattice mismatch strain created by the implantation is a possible driving force of the glide motion of the BPDs.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

271-274

DOI:

10.4028/www.scientific.net/MSF.556-557.271

Citation:

H. Tsuchida et al., "Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process", Materials Science Forum, Vols. 556-557, pp. 271-274, 2007

Online since:

September 2007

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$35.00

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