The DI Defect is Associated with a Stacking Fault?


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Using TEM we show that defective regions are formed in SiC by ion implantation, and that some of the regions grow at the expense of others. Using HRTEM we show that these regions contain a large number of stacking faults. It is proposed that these stacking faults are Frank intrinsic stacking faults formed by condensation of divacancies, and it is this defect that is associated with the DI defect.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




K. A. Jones et al., "The DI Defect is Associated with a Stacking Fault?", Materials Science Forum, Vols. 556-557, pp. 287-290, 2007

Online since:

September 2007




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