XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution

Abstract:

Article Preview

We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution with Accelerated Crucible Rotation Technique (ACRT). The self-standing crystal exhibited homogeneous green color without cracks and inclusions. The crystallinity of the self-standing crystal was characterized by various precise XRD diffraction measurements, such as の-scan rocking curve measurement, X-ray topography and reciprocal lattice mapping. The Full Width at Half Maximum (FWHM) of the の-scan rocking curves was about 20 arcsec. The X-ray topography showed a large area with a homogeneous orientation. The reciprocal lattice mapping exhibited a sharp single peak indicating the excellent crystallinity. Finally we confirmed rather high crystallinity of the self-standing crystals by etch pits measurement using molten KOH etching.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

303-306

Citation:

N. Yashiro et al., "XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution", Materials Science Forum, Vols. 556-557, pp. 303-306, 2007

Online since:

September 2007

Export:

Price:

$38.00

[1] D. Nakamura, I. Gunjishima, S. Yamaguchi, T. Ito, A. Okamoto, H. Kondo, S. Onda and K. Takatori: Nature 430 (2004), pp.1009-1012.

DOI: https://doi.org/10.1038/nature02810

[2] T. Furusho, H. Takagi, S. Ota, H. Shiomi and S. Nishino: Materials Science Forum Vols. 457-460(2004), pp.107-110.

DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.107

[3] M. Syväjärvi, R. Yakimova, H.H. Radamson, N.T. Son, Q. Wahab, I.G. IvanovaandaE. Janzen: J. Cryst. Growth 197 (1999), p.147.

DOI: https://doi.org/10.1016/s0022-0248(98)00878-1

[4] S. V. Rendakova, I. P. Nikitina, A. S. Tregubova and V. A. Dmitriev: J. Electron. Mater 27 (1998), p.292.

[5] K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima: Materials Science Forum Vols. 457-460(2004), pp.123-126.

DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.123

[6] K. Kusunoki, K. Kamei, N. Okada, N. Yashiro, A. Yauchi, T. Ujihara and K. Nakajima: Materials Science Forum Vols. 527-529, pp.119-122.

DOI: https://doi.org/10.4028/www.scientific.net/msf.527-529.119

Fetching data from Crossref.
This may take some time to load.