XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution

Abstract:

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We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution with Accelerated Crucible Rotation Technique (ACRT). The self-standing crystal exhibited homogeneous green color without cracks and inclusions. The crystallinity of the self-standing crystal was characterized by various precise XRD diffraction measurements, such as の-scan rocking curve measurement, X-ray topography and reciprocal lattice mapping. The Full Width at Half Maximum (FWHM) of the の-scan rocking curves was about 20 arcsec. The X-ray topography showed a large area with a homogeneous orientation. The reciprocal lattice mapping exhibited a sharp single peak indicating the excellent crystallinity. Finally we confirmed rather high crystallinity of the self-standing crystals by etch pits measurement using molten KOH etching.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

303-306

DOI:

10.4028/www.scientific.net/MSF.556-557.303

Citation:

N. Yashiro et al., "XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution", Materials Science Forum, Vols. 556-557, pp. 303-306, 2007

Online since:

September 2007

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Price:

$35.00

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