Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC

Abstract:

Article Preview

We report a comparison of continuous-wave photoluminescence spectra with spatiallyresolved micro-photoluminescence data collected at low temperature on as-grown stacking faults in a 4H-SiC epitaxial layer. We find that the defects have a large triangular shape (50 μm x 50 μm x 50 μm) and that the maximum signal wavelength shifts when scanning across one triangular defect. These results show that the built-in electric field in the stacking fault well can be screened, more or less depending on the incoming light intensity.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

351-354

Citation:

S. Juillaguet et al., "Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 351-354, 2007

Online since:

September 2007

Export:

Price:

$38.00

[1] for a recent review, see: A.A. Lebedev: Semicond. Sci. Technol. Vol. 21 (2006), p. R17.

[2] H.J. Chung, J.Q. Liu and M. Skowronski: Appl. Phys. Lett. Vol. 81 (2002), p.3759.

[3] R.S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen and L.J. Brillson: Appl. Phys. Lett. Vol. 79, (2001), p.3056.

DOI: https://doi.org/10.1063/1.1415347

[4] B.J. Skromme, K. Palle, C.D. Poweleit, L.R. Bryant, W.M. Vetter, M. Dudley, K. Moore and T. Gehoski: Materials Sci. Forum Vol. 389-393 (2002), p.455.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.455

[5] S.G. Sridhara, F.H.C. Carlsson, J.P. Bergman and E. Janzén: Appl. Phys. Lett. Vol. 79 (2001) p.3944.

[6] S. Izumi, H. Tsuchida, I. Kamata and T. Tawara: Appl. Phys. Lett. Vol. 86 (2005), 202108.

[7] F. Bechstedt and P. Käckell: Phys. Rev. Lett. Vol. 75 (1995), p.2180.

[8] A. Qteish, V. Heine and R.J. Needs: Phys. Rev. B. Vol. 45 (1992), p.6534.

[9] S. Bai, R.P. Devaty, W.J. Choyke, U. Kaiser, G. Wagner, M.F. MacMillan: Appl. Phys. Lett. Vol. 83 (2003), p.3172.

[10] B.J. Skromme, M.K. Mikhov, L. Chen, G. Samson, R. Wang, C. Li and I. Bhat: Materials Sci. Forum Vol. 457-460 (2004), p.581.

[11] S. Juillaguet, C. Balloud, J. Pernot, C. Sartel, V. Soulière, J. Camassel and Y. Monteil: Materials Sci. Forum Vol. 457-460 (2004), p.577.

DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.577

[12] S. Juillaguet and J. Camassel : Materials Sci. Forum Vol. 483-485 (2005), p.335.

[13] T. Chassagne, A. Leycuras, C. Balloud, P. Arcade, H. Peyre, and S. Juillaguet : Materials Sci. Forum Vol. 457-460 (2004), p.273.

DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.273

[14] W.J. Choyke, D. R. Hamilton and L. Patrick: Phys. Rev. Vol. 133 (4A) (1964), p. A1163; also see : R.P. Devaty and W. J. Choyke: Phys. Stat. Sol. (a) Vol. 162-5 (1997) and Refs therein.

[15] M.E. Levinshtein, S.L. Rumyantsev and M.S. Shur: Properties of Advanced Semiconductor Materials, ISBN 0-471-35827-4 (Wiley-Interscience ed. ).

Fetching data from Crossref.
This may take some time to load.