Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC


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We report a comparison of continuous-wave photoluminescence spectra with spatiallyresolved micro-photoluminescence data collected at low temperature on as-grown stacking faults in a 4H-SiC epitaxial layer. We find that the defects have a large triangular shape (50 μm x 50 μm x 50 μm) and that the maximum signal wavelength shifts when scanning across one triangular defect. These results show that the built-in electric field in the stacking fault well can be screened, more or less depending on the incoming light intensity.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




S. Juillaguet et al., "Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 351-354, 2007

Online since:

September 2007




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