FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
The resonant frequencies and quality factors of MEMS and NEMS depend critically on the layer quality and the residual stress in the SiC/Si heterostructure. It is demonstrated, that FTIRellipsometry is a suitable technique for monitoring the inhomogeneous residual stress inside SiC/Si heterostructures containing thin layers and their variation with during processing.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
J. Pezoldt et al., "FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS", Materials Science Forum, Vols. 556-557, pp. 363-366, 2007