FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS

Abstract:

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The resonant frequencies and quality factors of MEMS and NEMS depend critically on the layer quality and the residual stress in the SiC/Si heterostructure. It is demonstrated, that FTIRellipsometry is a suitable technique for monitoring the inhomogeneous residual stress inside SiC/Si heterostructures containing thin layers and their variation with during processing.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

363-366

DOI:

10.4028/www.scientific.net/MSF.556-557.363

Citation:

J. Pezoldt et al., "FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS", Materials Science Forum, Vols. 556-557, pp. 363-366, 2007

Online since:

September 2007

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Price:

$35.00

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