Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes

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Recently published experimental results for 4H–SiC diodes up to 700 °C are used to deduce the hole lifetime temperature-dependence in n-base for high temperature range. The reverse recovery measurements are interpreted by the nonisothermal drift-diffusion simulator DYNAMIT. The uncertainties from lifetimes unknown behavior in emitter layers and consequences from possible nonuniform lifetime distribution in n-base are analyzed. Results show that up to temperature 400 °C nearly quadratic dependence of lifetime versus temperature τ ~ T 2 holds. At higher temperatures lifetime growth is accelerated approximately to quartic dependence τ ~ T 4.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

375-378

Citation:

A. Udal and E. Velmre, "Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes", Materials Science Forum, Vols. 556-557, pp. 375-378, 2007

Online since:

September 2007

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$38.00

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