Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes


Article Preview

Recently published experimental results for 4H–SiC diodes up to 700 °C are used to deduce the hole lifetime temperature-dependence in n-base for high temperature range. The reverse recovery measurements are interpreted by the nonisothermal drift-diffusion simulator DYNAMIT. The uncertainties from lifetimes unknown behavior in emitter layers and consequences from possible nonuniform lifetime distribution in n-base are analyzed. Results show that up to temperature 400 °C nearly quadratic dependence of lifetime versus temperature τ ~ T 2 holds. At higher temperatures lifetime growth is accelerated approximately to quartic dependence τ ~ T 4.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




A. Udal and E. Velmre, "Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes", Materials Science Forum, Vols. 556-557, pp. 375-378, 2007

Online since:

September 2007




[1] H. Matsuura, M. Komeda, S. Kagamira et al.: J. Appl. Phys. Vol. 96 (2004), p.2708.

[2] S. Kagamira, H. Matsuura, T. Hatakeyama et al.: J. Appl. Phys. Vol. 96 (2004), p.5601.

[3] T.T. Mnatsakanov, M.E. Levinshtein, L.I. Pomortseva, and S.N. Yurkov: Semicond. Sci. Technol., Vol. 17 (2002), p.974.

[4] A. Udal and E. Velmre: Mater. Sci. Forum Vol. 338-342 (2000), p.781.

[5] M.E. Levinshtein, P.A. Ivanov, M.S. Boltovets, V.A. Krivutsa, J.W. Palmour, M.K. Das, B.A. Hull: Solid-State Electron. Vol. 49 (2005), p.1228.

[6] M.S. Boltovets, V.V. Basanets, N. Camara, V.A. Krivutsa, K. Zekentes: Mater. Sci. Forum Vol. 527-529 (2006), p.1375.


[7] M.E. Levinshtein, T.T. Mnatsakanov, P. Ivanov, J.W. Palmour, S.L. Rumyantsev, R. Singh, and S.N. Yurkov: IEEE Trans. Electron Devices Vol. 48 (2001), p.1703.


[8] P.A. Ivanov, M.E. Levinshtein, K.G. Irvine, O. Kordina, J.W. Palmour, S.L. Rumyantsev, R. Singh: Electronics Letters Vol. 35 (1999), p.1382.

[9] A.K. Agarwal, P.A. Ivanov, M.E. Levinshtein, J.W. Palmour, S.L. Rumyantsev, S.H. Ryu, and M.S. Shur: Mater. Sci. Forum Vol. 353-356 (2001), p.743.

[10] K.W. Böer: Survey of Semiconductor Physics 2 nd ed. Vol. 1 (New York, Wiley, 2002).

[11] A. Galeckas, J. Linnros, and B. Breitholtz: J. Appl. Phys. Vol. 74 (1999), p.3398.

[12] E. Velmre and A. Udal: Physica Scripta Vol. T79 (1999), p.193.

[13] M.E. Levinshtein et al.: Solid-State Electron. Vol. 48 (2004), p.807 Fig. 5. The extracted hole lifetime temperature dependence for the case if n-base contains a destroyed layer with low lifetime.