Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
Recently published experimental results for 4H–SiC diodes up to 700 °C are used to deduce the hole lifetime temperature-dependence in n-base for high temperature range. The reverse recovery measurements are interpreted by the nonisothermal drift-diffusion simulator DYNAMIT. The uncertainties from lifetimes unknown behavior in emitter layers and consequences from possible nonuniform lifetime distribution in n-base are analyzed. Results show that up to temperature 400 °C nearly quadratic dependence of lifetime versus temperature τ ~ T 2 holds. At higher temperatures lifetime growth is accelerated approximately to quartic dependence τ ~ T 4.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
A. Udal and E. Velmre, "Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes", Materials Science Forum, Vols. 556-557, pp. 375-378, 2007