Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers
Micro-photoluminescence can be used to image electrically active structural defects in SiC. Under suitable excitation conditions it is possible to observe both band-edge PL and near bandedge PL from recombination via a shallow boron acceptor. The intensity of the band-edge emission is related to the carrier lifetime – and is reduced by the presence of structural or interfacial defects. The intensity of the deep level PL is a complex function of the number of radiative centers and the number of centers limiting carrier lifetime. Micro-PL mapping can provide information on the spatial distribution of electrically active defects in SiC.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
J. Hennessy and T. Ryan, "Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers", Materials Science Forum, Vols. 556-557, pp. 383-386, 2007