Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers


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Micro-photoluminescence can be used to image electrically active structural defects in SiC. Under suitable excitation conditions it is possible to observe both band-edge PL and near bandedge PL from recombination via a shallow boron acceptor. The intensity of the band-edge emission is related to the carrier lifetime – and is reduced by the presence of structural or interfacial defects. The intensity of the deep level PL is a complex function of the number of radiative centers and the number of centers limiting carrier lifetime. Micro-PL mapping can provide information on the spatial distribution of electrically active defects in SiC.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




J. Hennessy and T. Ryan, "Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers", Materials Science Forum, Vols. 556-557, pp. 383-386, 2007

Online since:

September 2007




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