Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer

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Three types of defects, namely defect I, defect II, defect III, in the 4H-SiC homoepilayer were investigated by micro-raman scattering measurement. These defects all originate from a certain core and are composed of (I) a wavy tail region, (II) two long tails, the so called comet and (III) three plaits. It was found that there are 3C-SiC inclusions in the cores of defect II and defect III and the shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped inclusion, the defect III would be formed; otherwise, the defect II was formed. No inclusion was observed in the core of the defect I. The mechanisms of these defects are discussed.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

387-390

Citation:

X. F. Liu et al., "Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer", Materials Science Forum, Vols. 556-557, pp. 387-390, 2007

Online since:

September 2007

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$38.00

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