Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
Three types of defects, namely defect I, defect II, defect III, in the 4H-SiC homoepilayer were investigated by micro-raman scattering measurement. These defects all originate from a certain core and are composed of (I) a wavy tail region, (II) two long tails, the so called comet and (III) three plaits. It was found that there are 3C-SiC inclusions in the cores of defect II and defect III and the shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped inclusion, the defect III would be formed; otherwise, the defect II was formed. No inclusion was observed in the core of the defect I. The mechanisms of these defects are discussed.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
X. F. Liu et al., "Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer", Materials Science Forum, Vols. 556-557, pp. 387-390, 2007