Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations


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The microscopic origin of the Nx EPR-lines observed in heavily nitrogen doped 4H-SiC and 6H-SiC is discussed with the help of EPR parameters calculated from first principles. Based on the symmetry of the g-tensors we propose a model with distant NC donor pairs on inequivalent lattice sites which are coupled to S=1 centers but with nearly vanishing zero-field splittings, giving rise to an essentially S=1/2 like spectrum. The proposed aggregation in neutral donor pairs can contribute to the saturation of the free concentration observed in heavily nitrogen doped SiC.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




U. Gerstmann et al., "Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations", Materials Science Forum, Vols. 556-557, pp. 391-394, 2007

Online since:

September 2007




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