Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates

Abstract:

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A lightly doped n-type homo-epitaxial layer was grown by CVD onto a heavily doped n-type 4H-SiC substrate for which half of the surface had been made porous by photoelectrochemical etching. Raman spectra are obtained in the optic phonon region using three scattering geometries. An effective medium model for the porous layer is used to assist in the interpretation of the spectra. This work demonstrates that the contributions to the Raman spectra of the various layers in a sample with multiple 4H-SiC layers can be extracted.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

415-418

DOI:

10.4028/www.scientific.net/MSF.556-557.415

Citation:

M. J. Clouter et al., "Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates", Materials Science Forum, Vols. 556-557, pp. 415-418, 2007

Online since:

September 2007

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Price:

$35.00

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