Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide

Abstract:

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The paper presents the results of a quantitative theoretical calculation concerning the shift and the splitting of the ground-state manifold of the nitrogen donor in 4H-SiC under uniform electric field. Two cases are distinguished corresponding to a field applied parallel and perpendicular to the crystal axis. A comparison with the phosphorus donor in Si is carried out.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

435-438

Citation:

I. G. Ivanov and E. Janzén, "Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide", Materials Science Forum, Vols. 556-557, pp. 435-438, 2007

Online since:

September 2007

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[2] The insert shows the minute decrease of the contribution of valley 1, along the wave vector of which the electric field E⊥c is applied, into the total wavefunction given by Eq. (3).

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