Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
The paper presents the results of a quantitative theoretical calculation concerning the shift and the splitting of the ground-state manifold of the nitrogen donor in 4H-SiC under uniform electric field. Two cases are distinguished corresponding to a field applied parallel and perpendicular to the crystal axis. A comparison with the phosphorus donor in Si is carried out.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
I. G. Ivanov and E. Janzén, "Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide", Materials Science Forum, Vols. 556-557, pp. 435-438, 2007