Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide

Abstract:

Article Preview

The paper presents the results of a quantitative theoretical calculation concerning the shift and the splitting of the ground-state manifold of the nitrogen donor in 4H-SiC under uniform electric field. Two cases are distinguished corresponding to a field applied parallel and perpendicular to the crystal axis. A comparison with the phosphorus donor in Si is carried out.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

435-438

DOI:

10.4028/www.scientific.net/MSF.556-557.435

Citation:

I. G. Ivanov and E. Janzén, "Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide", Materials Science Forum, Vols. 556-557, pp. 435-438, 2007

Online since:

September 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.