Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis

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Impurity atoms in a high-purity semi-insulating 4H-SiC substrate fabricated by sublimation and an n-type 3C-SiC substrate fabricated by Chemical Vapor Deposition (CVD) were evaluated by neutron activation analysis. Cr, Fe, Zn, As, Br, Mo, Sb, Eu, Yb, Hf, Ta, W and Au atoms were detected in the 4H-SiC fabricated by sublimation. In the 3C-SiC fabricated by CVD, Cr, Zn, As, Br, Mo, Sb, La Sm and Hf atoms were found. The concentration of these atoms tends to decrease with increasing atomic number.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

457-460

Citation:

T. Ohshima et al., "Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis", Materials Science Forum, Vols. 556-557, pp. 457-460, 2007

Online since:

September 2007

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$38.00

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