SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts
We report the results of a SIMS and micro-Raman investigation performed on cubic (3C) SiC crystals grown on hexagonal SiC seeds using a Ge-Si bath and the so-called Vapor Liquid Solid growth technique. From SIMS measurements, we find a Ge concentration which, roughly, scales like the Ge concentration in the melt and, in term of micro-Raman measurements, explains the presence of weak but discernable Ge-Ge peaks around 300 cm-1. Since no similar Si-Si vibrations are found, this discard the possibility of having at the same time both Ge and Si constitutional super-cooling with two separate Ge and Si phases.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
H. Peyre et al., "SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts ", Materials Science Forum, Vols. 556-557, pp. 477-480, 2007