SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts

Abstract:

Article Preview

We report the results of a SIMS and micro-Raman investigation performed on cubic (3C) SiC crystals grown on hexagonal SiC seeds using a Ge-Si bath and the so-called Vapor Liquid Solid growth technique. From SIMS measurements, we find a Ge concentration which, roughly, scales like the Ge concentration in the melt and, in term of micro-Raman measurements, explains the presence of weak but discernable Ge-Ge peaks around 300 cm-1. Since no similar Si-Si vibrations are found, this discard the possibility of having at the same time both Ge and Si constitutional super-cooling with two separate Ge and Si phases.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

477-480

Citation:

H. Peyre et al., "SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts ", Materials Science Forum, Vols. 556-557, pp. 477-480, 2007

Online since:

September 2007

Export:

Price:

$38.00

[1] K. K. Lee, Y. Ishida, T. Ohshima, K. Kojima, Y. Tanaka, T. Takahashi, H. Okumura, K. Arai and T. Kamiya: Electron Device Letters IEEE Vol. 24 (2003), p.466.

[2] M. Soueidan, G. Ferro, J. Dazord, Y. Monteil and G. Younes: J. Crystal Growth Vol. 275 (1-2) (2005), p.1011.

[3] M. Soueidan and G. Ferro: Adv. Funct. Mater. Vol. 16 (2006), p.975.

[4] D.H. Hofmann and M.H. Müller: Mater. Science and Engineering Vol. B61-62 (1999), p.29.

[5] J. Eid, J.L. Santailler, B. Ferrand, P. Ferret, J. Pesenti, A. Basset, A. Passero, A. Mantzari, E.K. Polychroniadis, C. Balloud, P. Soares, J. Camassel: Proceedings ICSCRM-05 (in press).

DOI: https://doi.org/10.4028/0-87849-425-1.123

[6] Yu.A. Vodakov, E.N. Mokhov, M.G. Ramm and A.D. Roenkov: Springer Proc. Physics Vol. 56 (1992), p.329.

[7] S. Rath, M. L. Hsieh, P. Etchegoin and R. A. Stradling: Semicond. Sci. Technol. Vol. 18 (2003), p.566.

[8] Z. Sui, H. Burke and I. Herman: Phys. Rev. Vol. B 48 (1993), p.2162.

Fetching data from Crossref.
This may take some time to load.