SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts


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We report the results of a SIMS and micro-Raman investigation performed on cubic (3C) SiC crystals grown on hexagonal SiC seeds using a Ge-Si bath and the so-called Vapor Liquid Solid growth technique. From SIMS measurements, we find a Ge concentration which, roughly, scales like the Ge concentration in the melt and, in term of micro-Raman measurements, explains the presence of weak but discernable Ge-Ge peaks around 300 cm-1. Since no similar Si-Si vibrations are found, this discard the possibility of having at the same time both Ge and Si constitutional super-cooling with two separate Ge and Si phases.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




H. Peyre et al., "SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts ", Materials Science Forum, Vols. 556-557, pp. 477-480, 2007

Online since:

September 2007




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