An Approach to Model Temperature Effects of Interface Traps in 4H-SiC

Abstract:

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In 4H silicon carbide MOSFETs, threshold voltage varies with temperature. It is believed that this is caused by trapping of inversion electrons at high density of interface-traps (Dit) present at the SiC/SiO2 interface in 4H-SiC MOSFETs. In this work, we present an approach to model the interface trap density as a function of temperature that includes the effect of band gap narrowing. Using the temperature dependent trap charge density, we can estimate the variation of mobile inversion layer charge density, which in turn, explains the threshold voltage behavior with temperature in 4H-SiC MOSFETs.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

497-500

DOI:

10.4028/www.scientific.net/MSF.556-557.497

Citation:

R. R. Rao et al., "An Approach to Model Temperature Effects of Interface Traps in 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 497-500, 2007

Online since:

September 2007

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Price:

$35.00

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