Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism


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This paper studies the electronic properties of MOS capacitors fabricated on double positioning boundary free 3C-SiC/6H-SiC where the 3C-SiC films were grown using the Vapour- Liquid-Solid mechanism. The temperature- and frequency-dependent electrical properties of SiO2/3C-SiC/6H-SiC structures have been studied. Capacitance measurements indicate that the single-domain 3C-SiC film is doped near the surface with an average concentration of 8.3 × 1016 cm-3. The measured interface state density near the conduction band edge of 3C-SiC is below 1011cm-2⋅eV-1 and increases towards mid-gap as obtained from conductance and capacitance measurements. Our results are consistent with the assumption that the interfaces of SiO2/ n-type SiC consist of two different kinds of interface traps – the carbon clusters located at the interface and the intrinsic defects located within the oxide layer.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




K. K. Lee et al., "Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism", Materials Science Forum, Vols. 556-557, pp. 505-508, 2007

Online since:

September 2007




[1] G. Pensl, M. Bassler, F. Ciobanu, V. Afanas'ev. H. Yano, T. Kimoto, H. Matsunami: Mat. Res. Soc. Symp. Proc. 640 (2001), H3. 2.

[2] R. Schorner, P. Friedrichs, D. Peters, and D. Stephani: IEEE Electron Device Lett. 20 (1999), p.241.

[3] K. K. Lee, Y Ishida, T Ohshima, K. Kojima, Y. Tanaka, T. Takahashi, H. Okumura, K. Arai, and T. Kamiya: IEEE Electron Device Lett. 24 (2003), p.466.

[4] M. Soueidan, G. Ferro: Adv. Funct. Mater. 16 (2006), p.975.

[5] E. H. Nicollian and J. R. Brews: MOS (Metal-Oxide-Semiconductor) Physics and Technology (Wiley), New York, (1982).

[6] M. El-Sayed, G. Pananakakis, G. Kamarinos: Solid State Electron 28 (1985), p.345.

[7] V. V. Afanas'ev, M. Bassler, G. Pensl: and M. Schulz, Phys. Stat. Sol. (a) 162 (1997), p.321.

[8] V. V. Afanas'ev and A. Stesmans: Phys. Review Lett. 78 (1997).

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