Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism
This paper studies the electronic properties of MOS capacitors fabricated on double positioning boundary free 3C-SiC/6H-SiC where the 3C-SiC films were grown using the Vapour- Liquid-Solid mechanism. The temperature- and frequency-dependent electrical properties of SiO2/3C-SiC/6H-SiC structures have been studied. Capacitance measurements indicate that the single-domain 3C-SiC film is doped near the surface with an average concentration of 8.3 × 1016 cm-3. The measured interface state density near the conduction band edge of 3C-SiC is below 1011cm-2⋅eV-1 and increases towards mid-gap as obtained from conductance and capacitance measurements. Our results are consistent with the assumption that the interfaces of SiO2/ n-type SiC consist of two different kinds of interface traps – the carbon clusters located at the interface and the intrinsic defects located within the oxide layer.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
K. K. Lee et al., "Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism", Materials Science Forum, Vols. 556-557, pp. 505-508, 2007