Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism


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This paper studies the electronic properties of MOS capacitors fabricated on double positioning boundary free 3C-SiC/6H-SiC where the 3C-SiC films were grown using the Vapour- Liquid-Solid mechanism. The temperature- and frequency-dependent electrical properties of SiO2/3C-SiC/6H-SiC structures have been studied. Capacitance measurements indicate that the single-domain 3C-SiC film is doped near the surface with an average concentration of 8.3 × 1016 cm-3. The measured interface state density near the conduction band edge of 3C-SiC is below 1011cm-2⋅eV-1 and increases towards mid-gap as obtained from conductance and capacitance measurements. Our results are consistent with the assumption that the interfaces of SiO2/ n-type SiC consist of two different kinds of interface traps – the carbon clusters located at the interface and the intrinsic defects located within the oxide layer.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




K. K. Lee et al., "Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism", Materials Science Forum, Vols. 556-557, pp. 505-508, 2007

Online since:

September 2007




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