Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy

Abstract:

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Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED. For the initial stage of graphitization – the 6√3 reconstructed surface – we observe σ-bands characteristic of graphitic sp2-bonded carbon. The π-bands are modified by the interaction with the substrate. C1s core level spectra indicate that this layer consists of two inequivalent types of carbon atoms. The next layer of graphite (graphene) formed on top of the 6√3 surface at TA=1250°C-1300°C has an unperturbed electronic structure. Annealing at higher temperatures results in the formation of a multilayer graphite film. It is shown that the atomic arrangement of the interface between graphite and the SiC(0001) surface is practically identical to that of the 6√3 reconstructed layer.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

525-528

DOI:

10.4028/www.scientific.net/MSF.556-557.525

Citation:

K. V. Emtsev et al., "Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy", Materials Science Forum, Vols. 556-557, pp. 525-528, 2007

Online since:

September 2007

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$35.00

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