4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate


Article Preview

We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The polytype stability has been maintained over the larger part of the wafer, but 3C inclusions have not been possible to avoid. Special attention has given to the mechanism of generation and propagation of 3C polytype in 4H-SiC epilayer. Different optical and structural techniques were used to characterize the material and to understand the growth mechanisms. It was found that all 3C inclusions were generated at the interface between the substrate and the epitaxial layer, and no 3C inclusions were initiated at later stages of the growth.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall






J. ul Hassan et al., "4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate", Materials Science Forum, Vols. 556-557, pp. 53-56, 2007

Online since:

September 2007




[1] M. Treu, R. Rupp, H. Brunner, F. Dahlquist and Ch. Hecht: Mat. Sc. For. 457-460 (2004) 981.

[2] H. Jacobson, J.P. Bergman, C. Hallin, E. Janzen, T. Tuomi, H. Lendenmann,: J. Appl. Phy. 95 (2004) 1485.

[3] C. Hallin, I. Ivanov, J. P. Bergman, E. Janzén: Mat. Sc. For. 457- 460, (2003)193.

[4] A. Henry, J. ul Hassan, J. P. Bergman, C. Hallin, E. Janzén: Chemical Vapor Deposition, 12 (2006) 475.

[5] J. P. Bergman, O. Kordina, E. Janzén: Phys. Stat. Sol. 162 (1997) 65.

[6] T. Kimoto and H. Matsunami: J. Appl. Phys. 78 (1995) 3132.

In order to see related information, you need to Login.