Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum
In n-type 4H-SiC, over-oxidation of an implanted surface-near, Gaussian nitrogen-profile results in MOS capacitors, which possess a distinctly reduced density of interface states Dit and an undesirable large negative flatband voltage UFB. Their values are determined by the implantation parameters and the thickness of the oxide layer. The negative flatband voltage can strongly be compensated in the case that a Gaussian aluminum-profile is co-implanted prior to the oxidation. Depending on the conditions of the Al implantation, UFB can be controlled within a wide range. Secondary ion mass spectrometry analyses reveal that the implanted N and Al atoms are mobile in the oxide layer during the oxidation process and are partly accumulated at the SiC/SiO2 interface.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
T. Frank et al., "Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum", Materials Science Forum, Vols. 556-557, pp. 555-560, 2007