Post-Implantation Annealing of SiC: Relevance of the Heating Rate

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With the aim to set a starting point for future investigations on the relevance of the heating ramp on the annealing of ion implanted SiC, a review study is presented here. This study focuses on the heating rate of different annealing setups and presents results that highlight the relevance of the heating ramp on the morphological, structural and electrical properties of ion implanted <0001> 4H- and 6H-SiC. The post-implantation annealing results of hot and room temperature implanted SiC are so different that their presentation is kept distinct.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

561-566

DOI:

10.4028/www.scientific.net/MSF.556-557.561

Citation:

R. Nipoti "Post-Implantation Annealing of SiC: Relevance of the Heating Rate", Materials Science Forum, Vols. 556-557, pp. 561-566, 2007

Online since:

September 2007

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