Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC

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4H-SiC samples implanted with 1020 Al were annealed at various temperatures with a BN/AlN or graphite cap, and there morphological, structural, and electrical properties are compared. No blow holes were observed in either cap. Some Si out-diffuses through the graphite cap which results in a rougher surface and a structurally modified region near the surface. The BN/AlN cap annealed at 1800°C cannot be readily removed, whereas the graphite cap can be removed easily after any annealing temperature. The sheet resistances for both types of samples were about the same.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

575-578

Citation:

K. A. Jones et al., "Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC", Materials Science Forum, Vols. 556-557, pp. 575-578, 2007

Online since:

September 2007

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$38.00

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[5] [10] [15] [20] [25] [30] Ion Channeling Yield Annealing Temperature (ºC) AlN Cap C Cap Fig. 4. χmin for the RBS spectra for samples annealed at different temperatures with a nitride or C-cap.

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