Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC


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4H-SiC samples implanted with 1020 Al were annealed at various temperatures with a BN/AlN or graphite cap, and there morphological, structural, and electrical properties are compared. No blow holes were observed in either cap. Some Si out-diffuses through the graphite cap which results in a rougher surface and a structurally modified region near the surface. The BN/AlN cap annealed at 1800°C cannot be readily removed, whereas the graphite cap can be removed easily after any annealing temperature. The sheet resistances for both types of samples were about the same.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




K. A. Jones et al., "Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC", Materials Science Forum, Vols. 556-557, pp. 575-578, 2007

Online since:

September 2007




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[5] [10] [15] [20] [25] [30] Ion Channeling Yield Annealing Temperature (ºC) AlN Cap C Cap Fig. 4. χmin for the RBS spectra for samples annealed at different temperatures with a nitride or C-cap.