Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study

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High concentration of two types of P donors up to 1017 cm-3 in SiC enriched with 30Si after neutron transmutation doping (NTD) has been achieved. It was established that annealing at sufficiently low temperature of 1300oC, that is 500-600°C lower compared with annealing of NTD SiC with natural isotope composition, gives rise to the EPR signal of shallow P donors, labeled sPc1, sPc2 and sPh. The correlated changes of the EPR spectra of the three sP centres in all the experiments and the qualitative similarities with spectra of shallow N donors prove that these centres have shallow donor levels and a similar electronic structure and belong to different lattice sites. The annealing at 1700°C results in a transformation of one type of P donors (sPc1, sPc2 and sPh) into another type having low temperature EPR spectra labeled dP.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

599-602

Citation:

I. V. Ilyin et al., "Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study", Materials Science Forum, Vols. 556-557, pp. 599-602, 2007

Online since:

September 2007

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$38.00

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