Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study
High concentration of two types of P donors up to 1017 cm-3 in SiC enriched with 30Si after neutron transmutation doping (NTD) has been achieved. It was established that annealing at sufficiently low temperature of 1300oC, that is 500-600°C lower compared with annealing of NTD SiC with natural isotope composition, gives rise to the EPR signal of shallow P donors, labeled sPc1, sPc2 and sPh. The correlated changes of the EPR spectra of the three sP centres in all the experiments and the qualitative similarities with spectra of shallow N donors prove that these centres have shallow donor levels and a similar electronic structure and belong to different lattice sites. The annealing at 1700°C results in a transformation of one type of P donors (sPc1, sPc2 and sPh) into another type having low temperature EPR spectra labeled dP.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
I. V. Ilyin et al., "Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study", Materials Science Forum, Vols. 556-557, pp. 599-602, 2007