Paper Title:
Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study
  Abstract

High concentration of two types of P donors up to 1017 cm-3 in SiC enriched with 30Si after neutron transmutation doping (NTD) has been achieved. It was established that annealing at sufficiently low temperature of 1300oC, that is 500-600°C lower compared with annealing of NTD SiC with natural isotope composition, gives rise to the EPR signal of shallow P donors, labeled sPc1, sPc2 and sPh. The correlated changes of the EPR spectra of the three sP centres in all the experiments and the qualitative similarities with spectra of shallow N donors prove that these centres have shallow donor levels and a similar electronic structure and belong to different lattice sites. The annealing at 1700°C results in a transformation of one type of P donors (sPc1, sPc2 and sPh) into another type having low temperature EPR spectra labeled dP.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
599-602
DOI
10.4028/www.scientific.net/MSF.556-557.599
Citation
I. V. Ilyin, M. V. Muzafarova, P.G. Baranov, B.Y. Ber, A.N. Ionov, E.N. Mokhov, P. A. Ivanov, M.A. Kaliteevskii, P.S. Kop'ev, "Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study", Materials Science Forum, Vols. 556-557, pp. 599-602, 2007
Online since
September 2007
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