Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation

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Reduction in deep level defects and increase of carrier lifetime in 4H-SiC epilayer was observed after carbon ion implantation into the shallow surface layer of 250 nm and subsequent annealing above 1400 °C. The concentration of Z1/2 and EH6/7 traps was determined by deep level transient spectroscopy 4 μm below the implanted layer. After annealing, concentration of both traps decreased from 1013 cm-3 range to below the detection limit. Minority carrier lifetime almost doubled in the implanted samples compared to the unimplanted samples. We suggest that carbon interstitials from the implanted layer in-diffuse into the layer underneath during annealing and annihilate with carbon vacancies. Our results indicate that Z1/2 and EH6/7 traps are most likely carbon vacancy related.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

603-606

Citation:

L. Storasta and H. Tsuchida, "Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation", Materials Science Forum, Vols. 556-557, pp. 603-606, 2007

Online since:

September 2007

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$38.00

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