Selenium and Tellurium Double Donors in SiC
Selenium (Se) and tellurium (Te) ions are implanted into n-type 6H-, 4H- and 3C-SiC epilayers. Double-correlated deep level transient spectroscopy investigations reveal that both Se and Te atoms form double donors in SiC. The number of double donors observed corresponds to the number of inequivalent lattice sites of the particular SiC polytype. This observation is a strong hint that Se and Te atoms reside on lattice sites. The activation energies FEa of Te double donors are larger than the corresponding ones of Se double donors.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
S. A. Reshanov et al., "Selenium and Tellurium Double Donors in SiC", Materials Science Forum, Vols. 556-557, pp. 607-610, 2007