Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling


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A fully-comprehensive three-dimensional simulation of a CVD epitaxial growth process has been undertaken and is reported here. Based on a previously developed simulation platform, which connects fluid dynamics and thermal temperature profiling with chemical species kinetics, a complete model of the reaction process in a low pressure hot-wall CVD reactor has been developed. Close agreement between the growth rate observed experimentally and simulated theoretically has been achieved. Such an approach should provide the researcher with sufficient insight into the expected growth rate in the reactor as well as any variations in growth across the hot zone.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall






Y. Shishkin et al., "Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling", Materials Science Forum, Vols. 556-557, pp. 61-64, 2007

Online since:

September 2007




[1] P.M. Lofgren, W. Ji, C. Hallin, C. -Y. Gu: J. Electrochem. Soc. 147 (2000), p.164.

[2] A.N. Vorob'ev, S. Yu. Karpov, M.V. Bogdanov, A.E. Komissarov, O.V. Bord, A.I. Zhmakin and Yu.N. Makarov: Comp. Mat. Science 24 (2002), p.520.

[3] Ö. Danielsson, A. Henry and E. Janzén: J. Cryst. Growth 243 (2002), p.170.

[4] J. Meziere, M. Ucar, E. Blanquet, M. Pons, P. Ferret and L. Di Cioccio: J. Cryst. Growth 267 (2004), p.436.

[5] A. Veneroni, F. Omarini, D. Moscatelli, M. Masi, S. Leone, M. Mauceri, G. Pistone and G. Abbondaza: J. Cryst. Growth 275 (2005), p. e295.

DOI: 10.1016/j.jcrysgro.2004.10.104

[6] R.L. Myers, Y. Shishkin, O. Kordina and S.E. Saddow: J. Cryst. Growth 285 (2005), p.486.

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